Power Semiconductor Module with Laser-Welded Leadframe

ABSTRACT

A power semiconductor module includes a substrate with a structured metallization layer and a number of semiconductor chips. Each chip has a first power electrode bonded to the metallization layer. A leadframe is laser-welded to second power electrodes of the semiconductor chips for electrically interconnecting the semiconductor chips. A control conductor is attached to the leadframe opposite to the semiconductor chips and is electrically isolated from the leadframe. The control conductor is electrically connected to control electrodes of the semiconductor chips in the group.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a national stage application of InternationalApplication No. PCT/EP2020/056641, filed on Mar. 12, 2020, which claimspriority to European Patent Application No. 19170007.9, filed on Apr.18, 2019, which applications are hereby incorporated herein byreference.

TECHNICAL FIELD

The invention relates to a power semiconductor module.

BACKGROUND

Semiconductor chips (such as IGBTs, MOSFETs, diodes, etc.) typicallyused in power semiconductor modules are vertical devices. The currentflows vertically from the top-side source/emitter contact to thebottom-side drain/collector contact. The full area of the bottom-side ofthe chip is bonded (for example soldered or sintered) to a metalliclayer (for example the top-metallization layer of a ceramic substrate).The top-side connection is usually realized by a multitude of thick wirebonds.

Recent developments focus on replacing Si devices by wide-band gapdevices made from SiC or GaN because of beneficial properties in termsof minimizing switching losses and/or increasing switching frequencies.In addition, the current densities increase and less chip area isavailable to accommodate the required number of wire bonds for a givencurrent.

Wire bonding technology may reach its limits with regards to currentcapability. This has already triggered a move from Al to Cu wires toensure reliable bonds. Nevertheless, the increasing current densities ofnovel power semiconductor switches may require superior top-sideconnections.

Furthermore, a multitude of thick bond wires may limit the manufacturingthroughput per wire bonder equipment and may lead to significant wear ofthe wire bonding tools. Also, the reliability of power semiconductormodules with a multitude of wire bonds may be limited, because wire bondfailures (such as lift-off, heel cracks, etc.) belong to the dominantfailure mechanisms.

US 2018 090 338 A1 describes a power semiconductor module with aleadframe welded to a stress buffering layer bonded to a chip.

US 2014/217 600 A1 relates to manufacturing of a semiconductor module,which has several semiconductor chips, which are bonded to a heatingbody.

DE 10 2012 222 791 A1 shows a semiconductor module having a contactelement, which is laser-welded via a sinter layer to a powersemiconductor chip.

JP 2013 105 789 A shows a semiconductor module with an electric contactelement, which is bonded to two semiconductor chips and to which aflexible circuit board is attached.

SUMMARY

Embodiments of the invention provide a reliable and easy and fast tomanufacture power semiconductor module with a high current density.

According to a first embodiment, a power semiconductor module comprisesa substrate with a structured metallization layer. Semiconductor chipsare bonded with first power electrodes to the metallization layer. Aleadframe, which is laser-welded to second electrodes of a group of thesemiconductor chips, is used for electrically interconnecting thesemiconductor chips. A control conductor is attached to the leadframeopposite to the semiconductor chips and is electrically isolated fromthe leadframe. The control conductor is electrically connected tocontrol electrodes of the semiconductor chips in the group and thecontrol conductor is laser-welded to at least one of the controlelectrodes.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject-matter of the invention will be explained in more detail inthe following text with reference to exemplary embodiments which areillustrated in the attached drawings.

FIG. 1 shows a perspective view of a power semiconductor module.

FIG. 2 shows a side view of the power semiconductor module of FIG. 1 .

FIG. 3 shows a cross-sectional view of the power semiconductor module ofFIG. 1 .

FIG. 4 shows a tree-shaped leadframe of the power semiconductor moduleof FIG. 1 .

FIG. 5 shows a grid-shaped leadframe of the power semiconductor moduleof FIG. 1 .

FIG. 6 shows a partial cross-sectional of a power semiconductor moduleaccording to an embodiment of the invention.

FIG. 7 shows a partial top view of a power semiconductor module.

The reference symbols used in the drawings, and their meanings, arelisted in summary form in the list of reference symbols. In principle,identical parts are provided with the same reference symbols in thefigures.

10 power semiconductor module

12 substrate

14 semiconductor chip

16 first leadframe

18 second leadframe

20 insulating layer

22 metallization layer

24 metallization layer

26 DC+ area

28 AC area

30, 30′ terminal area

30 a low side auxiliary source area

30 b low side gate area

30 c high side auxiliary source area

30 d high side gate area

30 e temperature sensor area

32 high side auxiliary drain part

34 a first row

34 b second row

34 c third row

34 d fourth row

36 a first group

36 b second group

38 first power electrode

40 second power electrode

42, 42′ buffer plate

44 first flexible circuit board

46 second flexible circuit board

48 insulation base layer

50 electrically conducting layer

52 gate/control conductor

54 auxiliary/source/control conductor

56 wire bond

58 control electrode

60 wire bond

62 wire bond

64 wire bond

66 central part

68, 68′ power terminal

70 branching part

72 AC area connection

74 peripheral part

76, 76′ first layer

78, 78′ second layer

80 active electrode area

82 laser-weld

84 leadframe preform

86 bridge

88 housing

90 control substrate

92 electrically insulating layer

94 isolated cable or wire

DETAILED DESCRIPTION OF EXEMPLARY ILLUSTRATIVE EMBODIMENTS

The invention relates to a power semiconductor module. A powersemiconductor module may be an assembly comprising power semiconductorchips, their electrical interconnections, terminals and a mechanicalstructure supporting all these components. A power semiconductor modulemay comprise a housing and terminal protruding from the housing. Forexample, the above-mentioned parts may be cased into a housing made frompolymer material.

The term “power” here and in the following may be related to modules,chips and/or devices, which are adapted for processing a voltage of morethan 100 V, for example more than 100 V and/or more than 1 A, forexample more than 10 A.

The power semiconductor chips may be and/or may provide one or moresemiconductor devices, such as transistors, thyristors and/or diodes, inparticular IGBTs, IGCTs and/or MOSFETs. Some or all of the powersemiconductor chips may be power semiconductor switches. The powersemiconductor chips may be made from Si and/or from wide-band gapmaterials, such as SiC, GaN, etc.

According to an embodiment of the invention, the power semiconductormodule comprises a substrate with a structured metallization layer and aplurality of semiconductor chips bonded with first power electrodes tothe metallization layer. The substrate may comprise an isolating layer,for example made of ceramics, and the metallization layer, which may bemade of metal, such as Cu. The metallization layer may be structured,i.e., divided into areas, which are electrically disconnected on theisolation layer (but which may be electrically connected via furtherconductors).

The semiconductor chips may be sintered and/or soldered to themetallization layer. The first power electrode, such as a drain, asource, a collector or an emitter, may cover the complete side of thesemiconductor chip facing the metallization layer.

According to an embodiment of the invention, the power semiconductormodule comprises a leadframe, which is laser-welded to second electrodesof a group of the semiconductor chips for electrically interconnectingthe semiconductor chips. The leadframe may be a metal plate, for examplemade of Al, Cu, etc. and/or from sheet metal. The second powerelectrode, such as a drain, a source, a collector or an emitter,together with a control electrode, such as a gate, may cover thecomplete side of the semiconductor chip opposite to the metallizationlayer. The leadframe may solely cover the second power electrode. It maybe laser-welded to the second power electrode with a laser beam that isdirect towards the side of the leadframe facing away from the powersemiconductor chip. The laser-weld seam may be circular, line-shapedand/or dot-shaped and/or a combination thereof.

The group of semiconductor chips may be parallel with their powerelectrodes via the metallization layer of the substrate and theleadframe.

It has to be noted that the power semiconductor module may comprise morethan one laser-welded leadframe. The one or more leadframes may be usedas top-side source and/or emitter connection. A single leadframe mayconnect all parallel semiconductor chips.

According to an embodiment of the invention, the power semiconductormodule comprises a control conductor attached to the leadframe oppositeto the semiconductor chips and electrically isolated from the leadframe,wherein the control conductor is electrically connected to controlelectrodes of the semiconductor chips in the group and the controlconductor is laser-welded to at least one of the control electrodes. Thecontrol conductor may guide a control signal, such as a gate signal, tothe power semiconductor chips. The control conductor may comprise one ormore metallization layers and/or one or more wires, which areelectrically isolated from the leadframe. For example, electricallyisolated material is provided between the control conductor and theleadframe.

When the control conductor, for example in the form of a metal layer ofa flexible circuit board or substrate, is guided above the controlelectrode, it may be laser-welded to the control electrode.

It has to be noted that the control conductor also may be used forrouting other auxiliary signals, such as an auxiliary source connectionand/or signals from a sensor. Signal connections in the form of one ormore control conductors may be guided in additional layers on top of theleadframe.

The one or more leadframes may enable high reliability and low costpower modules. The one or more leadframes may be precisely placed on thesemiconductor chips on a power module substrate and welded by means of afocused laser beam. Leadframe based top-side connections may replace amultitude of thick wire bonds. Such leadframes may also act directly aspower terminals.

Furthermore, since the substrate area may be reduced, the footprint ofthe fully assembled power semiconductor module (including a moldencapsulation or housing) in turn may reduce roughly by half its size.Additionally, this may lead to cost savings of mold compound or housing.

The number of manufacturing steps may be reduced, since, for example,bonding of top substrates to the main substrate, subsequent cleaningsteps, and at least some terminal bonds may be omitted. The reliabilityof the power semiconductor module may increase, because the dominantfailure source of wire bonds may be mitigated. In the end, there may bean additional design freedom and/or improved electrical characteristicsenabled by multilayer coplanar current routing, for example by stackedleadframes.

According to an embodiment of the invention, the power semiconductormodule further comprises a flexible circuit board attached to theleadframe, wherein the control conductor is at least partially providedby a metal layer of the flexible circuit board. A flexible circuit boardmay comprise a flexible isolating layer and a metal layer. The flexibleand/or preformed circuit may be bonded, such as laminated, glued,welded, etc. to the leadframe. It may be either fully bonded or ondiscrete spots to the leadframe. The at least one metal layer mayprovide conductive tracks, which may be used as one or more controlconductors.

According to an embodiment of the invention, the power semiconductormodule further comprises an electrically insulated wire attached to theleadframe, wherein the control conductor is at least partially providedby a metal core of the electrically insulated wire. Additionally oralternatively to the flexible circuit board, one or more insulated wiresmay be attached (such as glued) to the leadframe. The one or moreinsulating wires may have a coaxial design, i.e., may have anelectrically conduction hose within the isolating for shielding acentral wire for routing the control signals.

According to an embodiment of the invention, the power semiconductormodule further comprises a control substrate with an electricallyinsulating layer attached to the leadframe, wherein the controlconductor is at least partially provided by a metallization layer of thecontrol substrate. Additionally or alternatively to the flexible circuitboard and/or one or more insulated wires, a control substrate may bebonded (such as glued soldered, etc.) to the leadframe. The controlsubstrate may be a ceramic substrate (such as direct bonded copper, DBCand/or active metal bracing, AMB) and/or an insulated metal substrate,IMS.

According to an embodiment of the invention, the control conductor isconnected via a wire bond with at least one of the control electrodes.One or more wire bonds may be used. The wire bond may compensatedifferent levels of the top side of the gate electrode and the controlconductor above the leadframe.

According to an embodiment of the invention, the control conductor ispart of a control substrate or a flexible circuit board, which protrudesover the leadframe at at least one of the control electrodes. It may bethat the control conductor is guided above the control electrode, suchthat it can be directly connected to the control electrode.

According to an embodiment of the invention, the control conductor mayelectrically be connected with a through-via with at least one of thecontrol electrodes. The control conductor may be bonded, such assoldered or sintered, to the control electrode.

According to an embodiment of the invention, a gate conductor and anauxiliary conductor are attached to the leadframe opposite to thesemiconductor chips and electrically isolated from the leadframe. Twocontrol conductors in the form of a gate conductor and an auxiliaryconductor may be provided on the leadframe. The auxiliary conductor maybe an auxiliary source connection.

According to an embodiment of the invention, two strips of the auxiliaryconductor are provided on two sides of the gate conductor. In such away, a coaxial arrangement of the gate conductor and the auxiliaryconductor may be achieved to minimize a gate loop inductance.

According to an embodiment of the invention, the second power electrodeof the semiconductor chips, to which the leadframe is laser-welded,comprises a metallic buffer plate bonded to the semiconductor chip. Thebuffer plate may be made of Cu or other weldable metals. The bufferplate may be bonded, such as soldered or sintered, to an active area ofthe semiconductor chip. The leadframe may be laser-welded to the bufferplate.

The buffer plate may facilitate laser-welding without damaging theactive area of the semiconductor chip, because the active areametallization of the semiconductor chip may be too thin to accommodate astable laser-weld. In general, one or multiple conducting buffer platesmay be bonded onto the chip top side to enable laser-welding on thesource pad or emitter pad.

Also the control electrode may comprise such a metallic buffer plate. Awire bond may be attached to the buffer plate. The control conductor maybe laser-welded to the buffer plate.

According to an embodiment of the invention, the metallic buffer platecomprises two layers of different metal materials, such as Mo and Cu. Astack of multiple buffer plates of different materials may be used, suchas a Mo plate on the semiconductor chip and a Cu plate on top of the Moplate to provide a weldable surface.

According to an embodiment of the invention, the leadframe provides apower terminal of the power semiconductor module, which protrudes from ahousing of the power semiconductor module. It may be that parts of theleadframe are used as external terminals. The housing may be a moldencapsulation and a part of the leadframe may protrude from the moldencapsulation.

According to an embodiment of the invention, a control terminalprotrudes from the housing at the same level as the leadframe. Thecontrol terminal is made of the same material and with the samethickness as the leadframe. The control terminal may be made from thesame leadframe preform as the leadframe interconnecting thesemiconductor chips. The control terminal and the leadframe may beinterconnected during manufacturing outside of the housing, wherein theinterconnection is removed after providing the housing.

According to an embodiment of the invention, the control terminal iselectrically interconnected with the control conductor inside thehousing. This may be done with a wire bond and/or via laser-welding thecontrol conductor to the control terminal.

In general, one or more additional terminals may be linked to theleadframe, wherein the links are removed, such as cut and/or trimmed, ina later production step.

According to an embodiment of the invention, the semiconductor chips arearranged in at least one row, wherein the leadframe comprises a centralpart running along the row and branching parts, which protrude from thecenter part over the semiconductor chips of the row. Semiconductor chipsconnected in parallel, which may form a single switch of the powersemiconductor module, may be arranged in one or more rows. The leadframemay comprise a longitudinal, center part which may run between the rowsof semiconductor chips to be connected. Each branching part may run fromthe center part to a position above a respective semiconductor chip. Ingeneral, the leadframe may be tree-shaped.

The control conductor may be provided on the central part and thebranching parts and/or also may be tree-shaped.

According to an embodiment of the invention, the branching parts arebent towards the semiconductor chips. The central part of the leadframemay be on a higher level as the ends of the branching parts. The centralpart may be more distant to the substrate as the ends of the branchingparts.

According to an embodiment of the invention, the leadframe comprises aperipheral part, which is attached to ends of the branching parts andwhich runs parallel to the central part. Such a leadframe mayinterconnect rows of semiconductor chips, which are more remote to eachother as in the case of a tree-shaped leadframe. Such a leadframe may beseen to have a grid-shaped form. The peripheral parts may guide thecurrent coaxial to the center part towards a terminal. In this case, thecontrol conductor may be provided on the peripheral part. The centralpart may be more distant to the substrate as the peripheral parts.

According to an embodiment of the invention, the power semiconductormodule forms a half-bridge and a first group of semiconductor chips areelectrically connected in parallel with their power electrodes to form alow-side switch and a second group of semiconductor switches areelectrically connected in parallel with their power electrodes to form ahigh-side switch. Each of the first group and the second group may beprovided in two rows of semiconductor chips, which may be interconnectedwith a tree-shaped leadframe and/or a grid-shaped leadframe.

A first leadframe may be laser-welded to second electrodes of the firstgroup of semiconductor chips and a second leadframe may be laser-weldedto second electrodes of the second group of semiconductor chips.

According to an embodiment of the invention, the semiconductor chips ofthe first group are arranged in rows along a center line of the powersemiconductor module and the semiconductor chips of the second group arearranged in two rows outside of the first group at two sides of thefirst group. The first leadframe, which may be tree-shaped, may bearranged between the substrate of the power semiconductor module and thesecond leadframe, which may be grid-shaped.

These and other aspects of the invention will be apparent from andelucidated with reference to the embodiments described hereinafter withrespect to the figures.

FIG. 1 shows a perspective view of a power semiconductor module 10,which comprises a substrate 12, semiconductor chips 14 bonded to thesubstrate 12 and two leadframes 16, 18, which electrically interconnectthe semiconductor chips 14 on their top side.

The semiconductor module is also shown in FIGS. 2 and 3 in a side viewand a cross-section view. There it is visible that the substrate 12comprises an insulating layer 20 and two metallization layers 22, 24 onboth sides of the insulating layer 20. The insulating layer 20 may bemade of ceramics. The metallization layers 22, 24 may be made of Cu.

As shown in FIG. 1 , the metallization layer 22 on the top side, i.e.,the side facing the semiconductor chips 14, is structured, i.e., dividedinto several disconnected areas 26, 28, 30. The area 26 is a DC+ areaand the area 28 is an AC area. The areas 3 a, 3 b, 3 c, 3 d may be usedas auxiliary source, low side gate, high side auxiliary source and highside gate. The part 32 of area 26 may be used as high side auxiliarydrain. The areas 3 e may be used as terminals for a temperature sensor.

The semiconductor chips 14 are bonded to the respective areas 26, 28 ofthe metallization layer 22 and are connected via the leadframes 16, 18to form a half-bridge. The semiconductor chips 14 are arranged in fourparallel rows 34 a, 34 b, 34 c, 34 d. The rows 34 a, 34 b form a firstgroup 36 a of parallel connected semiconductor chips 14, which provide alow side switch of the half-bridge. The rows 34 c, 34 d form a firstgroup 36 a of parallel connected semiconductor chips 14, which provide ahigh side switch of the half-bridge.

The semiconductor chips 14 provide a first power electrode 38 on theirbottom side and a second power electrode 40 on their top side.

The bottom side power electrodes 38 of the chips 14 of the rows 34 c, 34d are connected to the DC+ area 26, which during operation of the module10 is on DC+ potential. The top side power electrodes 40 of the chips 14of the rows 34 c, 34 d are connected to the leadframe 18, which is alsoconnected to the AC area 28. The leadframe 18 and the AC area 28 are onAC potential during operation of the module 10. The bottom side powerelectrodes 38 of the chips 14 of the rows 34 a, 34 b are connected tothe AC area 28. The top side power electrodes 40 of the chips 14 of therows 34 a, 34 a are connected to the leadframe 16, which is onDC-potential during operation of the module 10.

The leadframes 16, 18, which may be made of sheet metal and/or of Cu,are laser-welded to the top side electrodes 40. As shown in FIG. 3 , thetop side electrode 40 may comprise a buffer plate 42, which is bonded toan active area of the semiconductor chip 14. The leadframe 16, 18 thenmay be welded to the buffer plate 42, which may be made of a metal, suchas Cu and/or Mo.

As shown in FIG. 1 , a flexible circuit board 44, 46 is attached to atop side of each of the leadframes 16, 18. Each of the flexible circuitboards 44, 46 comprises an insulation base layer 48, which is attachedto the respective leadframe 16, 18 and an electrically conducting layer50 on top of the base layer 48 (see FIG. 3 ). The base layer 48 may bemade of a flexible plastics material and/or foil. The electricallyconducting layer 50, which may be made of Cu, is divided intodisconnected areas, each of which provides a control conductor 52, 54for the module 10.

Also as shown in FIGS. 4 and 5 , an inner area 52 of the layer 50provides the gate conductor 52. The inner area/gate conductor 52 is usedfor gate signal distribution. An outer area 54, which surrounds theinner area 52, provides a conductor 54 for an auxiliary sourcepotential. To minimize the gate loop inductance, the inner area 52 isguided between two traces and/or strips of the outer area 54. It alsomay be that only one area, such as the area 52 or the area 54 is presentfor conducting a control signal.

Returning to FIG. 1 , the gate conductor 52 may be connected via a wirebond 56 with the respective control electrode 58 of the respective powersemiconductor chip 14. A further wire bond 60 may be used to connect thegate conductor 52 to the terminal area 3 c, 3 b, respectively.

The auxiliary conductor 54 may be connected via a wire bond 62 with thepower electrode 40 of the respective power semiconductor chip 14. Afurther wire bond 64 may be used to connect the auxiliary conductor 54to the terminal area 3 d, 3 a, respectively.

The dimensions of the gate conductor 52 and/or the auxiliary conductor54 may be adapted depending on the requirements, for example whetherper-chip gate resistors are required. The area of the leadframe 16, 18to be laser-welded to the power semiconductor chips 14 may be left freeof the flexible circuit board 44, 46.

FIG. 4 shows the tree-shaped leadframe 16 in more detail. The leadframe16 has a longitudinal central part 66, which runs along a center of themodule 10, between the two inner rows 34 a, 34 b of semiconductor chips14. At one end, a power terminal 68 is connected to the central part 66,which power terminal is also made of the material of the leadframe 16.At the other end, the central part 66 is kinked, such that the flexiblecircuit board 44 on top of it is guided towards the terminal area 3 b(see FIG. 1 ). The semiconductor module 10 may have a moldedencapsulation and only a part of the terminal 68 may protrude from theencapsulation.

The leadframe 16 furthermore comprises branching parts 70, which branchoff substantially orthogonally from the central part 66. Ends of thebranching parts 70 are aligned above the power semiconductor chips 14 ofthe inner rows 34. Furthermore, the branching parts 70 are bent towardsthe semiconductor chips 14, such that the central part 66 is on a higherlevel as the ends of the branching parts 70.

The flexible circuit board 44 on the leadframe 16 runs along the centralpart and the branching parts 70 and also is tree-shaped.

FIG. 5 shows the grid-shaped leadframe 18 in more detail. As theleadframe 16, the leadframe 18 has a central part 66, a power terminal68′ and branching parts 70. When the leadframe 18 is in the module 10,the power terminal 68′ is arranged on an opposite side of the module 10with respect to the power terminal 68 of the leadframe 16.

The leadframe 18 also provides AC area connections 72, which areconnected to the branching parts 70 and which are bent down towards theAC area 28. The leadframe 18 may be laser-welded to the AC area 28 viathe AC area connections 72.

The leadframe 18 additionally has two longitudinal peripheral parts 74,which run parallel to the central part 66 and which are connected to thebranching parts 70. The peripheral parts 74 are on a lower level as thecentral part 66. The peripheral parts 74 are positioned on top of theouter rows 34 c, 34 d of semiconductor chip 14. The leadframe 18 iswelded via the peripheral parts 74 with the power semiconductor chips14.

The flexible circuit board 46 on the leadframe 16 runs along theperipheral parts 74 and the branching parts 70 besides the powerterminal 68′. The flexible circuit board 46 is U-shaped.

A power semiconductor module 10 may be manufactured as following.

In a first step, the semiconductor chips 14 may be bonded to thesubstrate 12. In this step, also the buffer plates 42 may be bonded tothe semiconductor chips 14.

In a second step, the first leadframe 16 may be laser-welded to thefirst group 36 a of semiconductor chips in the rows 34 a, 34 b. Afterthat, the gate conductor 52 may be wire-bonded to the respectivegate/control electrodes 58. Also, the auxiliary source conductor 54 maybe wire-bonded to the respective second electrodes 40.

In a third step, the second leadframe 18 may be laser-welded to thesecond group 36 b of semiconductor chips in the rows 34 c, 34 d. Thefirst leadframe 16 is then sandwiched between the substrate 12 and thesecond leadframe 18. The gate conductor 52 of the second leadframe 18may be wire-bonded to the respective gate/control electrodes 58. Also,the auxiliary source conductor 54 of the second leadframe 18 may bewire-bonded to the respective second electrodes 40.

Depending on the specific layout of the leadframes 16, 18, alternativemanufacturing sequences may be possible. For example, it may be possibleto merge both laser bonding steps and both wire bonding steps,respectively, when the second leadframe 18 is designed such that the topsides of the first group 36 a of semiconductor chips 14 remainaccessible.

FIG. 6 shows a partial cross-sectional of a power semiconductor module10, in which the buffer plate 42 has more than one layer 76, 78. Thelayers 76, 78 may be metal layers of different material, such as Mo andCu.

The power semiconductor chip 14 may comprise an active electrode area 80on the semiconductor substrate, to which the first layer 76, such as aMo layer is bonded (for example soldered or sintered). The second layer78, such as a Cu layer, is bonded to the first layer 76 and/or theleadframe 16, 18 is laser-welded to the second layer 78. FIG. 6 showslaser-welds 82 running through the leadframe 16, 18 and the second layer78. It may be that the laser-welds 82 stop before the first layer 76.

FIG. 6 shows a further embodiment, how the flexible circuit board 44, 46may be electrically connected to the semiconductor chip 14. The flexiblecircuit board 44, 46 protrudes and/or extends of an edge of theleadframe 16, 16. The flexible circuit board 44, 46 may lie on thegate/control electrode 58 and the gate/control conductor 52 may bedirectly bonded to the gate/control electrode 58, for example viawelding, laser-welding, soldering, etc. It may be that the flexiblecircuit board 44, 46 has a through-via between the gate/controlconductor 52 and the gate/control electrode 58.

It has to be noted that also the electrical connection of the auxiliaryconductor 54 to the electrode 40 may be made in this way.

It may be that a further buffer plate 42′ is bonded to an active area80′ of the gate/control electrode 58, which buffer plate 42′ also mayhave two layers 76′, 78′, which may be made as the ones of the bufferplate 42.

FIG. 7 shows a partial top view of a power semiconductor module 10,where several terminals 68′, 30′ are made from the same leadframepreform 84. The leadframe 18 may be connected via a bridge 86 with theterminal 30′, which may be a gate terminal. After attachment to themodule 10 the leadframe 18 and the terminal 30′ may be disconnected byremoving the bridge 86. In particular, the module 10 may comprise amolded housing 88, which is indicated by the dashed line. The leadframe18 and the terminal 30′ may be partially molded into the housing 88,which may be a mold encapsulation.

The same concept may be applied to other types of terminals, to theleadframe 16 in combination with other types of terminal and/or to bothleadframes 16, 18, i.e., the leadframes 16, 18 may be combined in onepreform 84, may be attached to the module 10 together and may bedisconnected by removing the bridge 86 after molding the housing.

FIG. 7 furthermore shows that the control conductor 52 may be providedby a control substrate 90 with an electrically insulating layer 92attached to the leadframe 18. The control conductor 52 may be providedby a metallization layer 50 on the control substrate 90, which may be aDBC, AMD or IMS substrate.

The control conductor 52 also may be provided by an isolated cable orwire 94, which may be attached and/or may run above the leadframe 18.This cable or wire 94 may be a coaxial cable.

It has to be noted that also the control conductor 54 may be provided assuch an isolated cable or wire 94 and/or that the control conductor 54may be provided as metallization layer 50 on a control substrate 90.

While the invention has been illustrated and described in detail in thedrawings and foregoing description, such illustration and descriptionare to be considered illustrative or exemplary and not restrictive; theinvention is not limited to the disclosed embodiments. Other variationsto the disclosed embodiments can be understood and effected by thoseskilled in the art and practicing the claimed invention, from a study ofthe drawings, the disclosure, and the appended claims. In the claims,the word “comprising” does not exclude other elements or steps, and theindefinite article “a” or “an” does not exclude a plurality. A singleprocessor or controller or other unit may fulfil the functions ofseveral items recited in the claims. The mere fact that certain measuresare recited in mutually different dependent claims does not indicatethat a combination of these measures cannot be used to advantage. Anyreference signs in the claims should not be construed as limiting thescope.

1-15. (canceled)
 16. A power semiconductor module, comprising: asubstrate with a structured metallization layer; a plurality ofsemiconductor chips, each chip having a first power electrode bonded tothe metallization layer; a leadframe laser-welded to second powerelectrodes of a group of the semiconductor chips for electricallyinterconnecting the semiconductor chips; and a control conductorattached to the leadframe opposite to the semiconductor chips andelectrically isolated from the leadframe, wherein the control conductoris electrically connected to control electrodes of the semiconductorchips in the group, the control conductor being laser-welded to at leastone of the control electrodes.
 17. The power semiconductor module ofclaim 16, further comprising a flexible circuit board attached to theleadframe, wherein the control conductor is at least partially providedby a metal layer of the flexible circuit board.
 18. The powersemiconductor module of claim 16, further comprising an electricallyinsulated wire attached to the leadframe, wherein the control conductoris at least partially provided by a metal core of the electricallyinsulated wire.
 19. The power semiconductor module of claim 16, furthercomprising a control substrate with an electrically insulating layerattached to the leadframe, wherein the control conductor is at leastpartially provided by a metallization layer of the control substrate.20. The power semiconductor module of claim 16, wherein the controlconductor is further connected via a wire bond to the at least one ofthe control electrodes.
 21. The power semiconductor module of claim 16,wherein the first power electrode of each chip is wire bonded to themetallization layer.
 22. The power semiconductor module of claim 16,wherein the control conductor is part of a control substrate or aflexible circuit board that protrudes over the leadframe at the controlelectrode of each semiconductor chip.
 23. The power semiconductor moduleof claim 22, wherein the control conductor is electrically connectedwith a through-via with at least one of the control electrodes.
 24. Thepower semiconductor module of claim 16, wherein a gate conductor and anauxiliary conductor are attached to the leadframe opposite to the groupof semiconductor chips and electrically isolated from the leadframe; andwherein two strips of the auxiliary conductor are provided on two sidesof the gate conductor.
 25. The power semiconductor module of claim 16,wherein the second power electrode of each semiconductor chip comprisesa metallic buffer plate bonded to the semiconductor chip; and whereinthe leadframe is laser-welded to the buffer plate of each semiconductorchip.
 26. The power semiconductor module of claim 16, wherein theleadframe provides a power terminal of the power semiconductor module,the power terminal protruding from a housing of the power semiconductormodule.
 27. The power semiconductor module of claim 26, wherein acontrol terminal protrudes from the housing at the same level as theleadframe, the control terminal being made of the same material and withthe same thickness as the leadframe; and wherein the control terminal iselectrically interconnected with the control conductor inside thehousing.
 28. The power semiconductor module of claim 16, wherein thesemiconductor chips are arranged in at least one row; and wherein theleadframe comprises a central part running along the row and branchingparts that extend from the central part over the semiconductor chips ofthe row.
 29. The power semiconductor module of claim 28, wherein thebranching pails are bent towards the semiconductor chips.
 30. A powersemiconductor module, comprising: a substrate with a structuredmetallization layer; a first group of semiconductor chips, each chip ofthe first group having a first power electrode bonded to themetallization layer in parallel with the other chips of the first group;a second group of semiconductor chips, each chip of the second grouphaving a first power electrode bonded to the metallization layer inparallel with the other chips of the second group; a first leadframelaser-welded to second power electrodes of the semiconductor chips ofthe first group of the semiconductor chips; a second leadframelaser-welded to second power electrodes of the semiconductor chips ofthe second group of the semiconductor chips; a first control conductorelectrically connected to control electrodes of the semiconductor chipsin the first group and electrically isolated from the first and secondleadframes; and a second control conductor electrically connected tocontrol electrodes of the semiconductor chips in the second group andelectrically isolated from the first and second leadframes, wherein thefirst control conductor is laser-welded to the control electrode of atleast one semiconductor chip of the first group or the second controlconductor is laser-welded to the control electrode of at least onesemiconductor chip of the second group.
 31. The power semiconductormodule of claim 30, wherein the power semiconductor module forms ahalf-bridge and the first group of semiconductor chips form a low-sideswitch and the second group of semiconductor switches form a high-sideswitch.
 32. The power semiconductor module of claim 30, wherein thesemiconductor chips of the first group are arranged along a center lineof the power semiconductor module; wherein the semiconductor chips ofthe second group are arranged in two rows outside of the first group attwo sides of the first group; and wherein the first leadframe isarranged between the substrate of the power semiconductor module and thesecond leadframe.
 33. The power semiconductor module of claim 32,wherein the semiconductor chips of the first group are arranged in tworows along the center line of the power semiconductor module.
 34. Thepower semiconductor module of claim 30, wherein the first controlconductor is laser-welded to the control electrode of the at least onesemiconductor chip of the first group and the second control conductoris laser-welded to the control electrode of the at least onesemiconductor chip of the second group.
 35. A power semiconductormodule, comprising: a substrate with a structured metallization layer; aplurality of semiconductor chips arranged in first and second rows, eachchip comprising a first power electrode bonded to the metallizationlayer; a leadframe comprising a central part running parallel to thefirst and second rows and branching parts, each branching part extendingfrom the central part toward a respective semiconductor of the first orsecond row, wherein a second power electrode of each semiconductor chipis laser-welded to the respective branching part; and a controlconductor attached to a surface of the leadframe opposite thesemiconductor chips and electrically isolated from the leadframe,wherein the control conductor is electrically connected to controlelectrodes of the semiconductor chips, the control conductor beinglaser-welded to the control electrodes.
 36. The power semiconductormodule of claim 35, wherein the branching parts are bent towards thesemiconductor chips.
 37. The power semiconductor module of claim 35,further comprising: a second plurality of semiconductor chips arrangedin third and fourth rows, the first and second rows being between thethird and fourth rows, wherein each chip comprises a first powerelectrode bonded to the metallization layer; and a second leadframeoverlying the first lead frame and comprising a central part runningparallel to the third and fourth rows and branching parts, eachbranching part extending from the central part toward a respectivesemiconductor of the third or fourth row, wherein a second powerelectrode of each semiconductor chip is laser-welded to the respectivebranching part.